From the SAED figures, the annealed film

gave a totally different pattern compared with the as-deposited film. A lot of diffraction spots were distributed randomly, which may be ascribed to the different crystalline structures of europium silicate. In order to investigate the element distribution after the annealing process, STEM measurements were also carried out. As shown in Figure 3, Si, Eu, and O are distributed homogeneously along the thickness, suggesting that Eu2O3 and Si reacted completely in each layer. Figure 2 Cross-sectional TEM images of the annealed sample 3. (a) Full view of the film, (b) partial enlarged view of the film, and (c) the SAED image 8-Bromo-cAMP of the film. Figure 3 The spectra of Eu, Si, and O distribution with thickness. The crystalline structure of the annealed films

with different Si layer thicknesses RG-7388 molecular weight was performed using XRD measurements, as shown in Figure 4. The XRD spectrum of the sample with 8-nm Si layer shows that Eu2O3, Eu2SiO5, Eu2SiO4, and EuSiO3 are mixed in the film after the annealing process. The corresponding JCPDS card numbers are 43-1008 (Eu2O3), 43-1009 (Eu2O3), 40-0286 (Eu2SiO5), 22-0286 (Eu2SiO4), and 35-0297 (EuSiO3). Eu2O3 peaks are stronger and sharper than the other peaks, suggesting that Eu2O3 is the major phase in the film due to the lack of Si. For the sample with a thicker Si layer, the XRD pattern was similar, but the Eu2O3 peak intensity had decreased. This is because more Eu3+ ions were involved in the reaction with increasing Si layer thickness.

The sample with 25-nm Cepharanthine Si layer exhibited different XRD patterns compared with the first two samples. The peaks corresponding to Eu2O3 and click here Eu2SiO5 (Eu3+) nearly disappeared, while the peaks corresponding to Eu2SiO4 became stronger. This indicates that Eu2SiO4 is the major phase in the film now. Moreover, through RBS measurements, the atomic concentrations of Eu, Si, and O were about 28, 14, and 58 at.% in the annealed film, which are very close to stoichiometric value of Eu2SiO4, which is consistent with the XRD results. This is interesting since the tetrahedron structure [SiO4]4− can prevent Eu2+ oxidation and energy transfer among the Eu2+ ions by isolating the Eu2+ ions with [SiO4]4−. Thus, Eu2+ in [SiO4]4− can exhibit longer stabilization and higher efficiency, which is already used in commercial phosphor such as Eu-doped silicate. By further increasing the Si layer thickness to 42 nm, Eu2O3 reacted with Si totally, and the Eu2O3-related peaks disappeared completely, as demonstrated by the XRD spectrum. Now, the film is mainly composed of Eu2SiO4 and EuSiO3 (Eu2+). This is consistent with Bellocchi’s work where abundant Si may cause the formation of EuSiO3[16].